▎ 摘　　要

The optical absorption coefficient of graphene will change after injecting carriers. Based on this principle, a high-speed double-layer graphene electro-optic modulator with a ring resonator structure was designed in this paper. From the numerical simulations, we designed a modulator. Its optical bandwidth is larger than 130 GHz, the switching energy is 0.358 fJ per bit, and the driven voltage is less than 1.2 V. At the same time, the footprint of the proposed modulator is less than 10 microns squared, which makes the process compatible with the Complementary Metal Oxide Semiconductors (CMOS) process. This will provide the possibility for the on-chip integration of the photoelectric device.