• 文献标题:   Growth and Raman Spectra of Single-Crystal Trilayer Graphene with Different Stacking Orientations
  • 文献类型:   Article
  • 作  者:   ZHAO HM, LIN YC, YEH CH, TIAN H, CHEN YC, XIE D, YANG Y, SUENAGA K, REN TL, CHIU PW
  • 作者关键词:   trilayer, graphene, stacking, raman, ald, tem
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Tsinghua Univ
  • 被引频次:   30
  • DOI:   10.1021/nn5044959
  • 出版年:   2014

▎ 摘  要

Understanding the growth mechanism of graphene layers in chemical vapor deposition (CVD) and their corresponding Raman properties is technologically relevant and of importance for the application of graphene in electronic and optoelectronic devices. Here, we report CVD growth of single-crystal trilayer graphene (TLG) grains on Cu and show that lattice defects at the center of each grain persist throughout the growth, indicating that the adlayers share the same nucleation site with the upper layers and these central defects could also act as a carbon pathway for the growth of a new layer. Statistics shows that ABA, 30-30, 30-AB, and AB-30 make up the major stacking orientations in the CVD-grown TLG, with distinctive Raman 2D characteristics. Surprisingly, a high level of lattice defects results whenever a layer with a twist angle of theta = 30 degrees is found in the multiple stacks of graphene layers.