• 文献标题:   Controlling the electronic structure of bilayer graphene
  • 文献类型:   Article
  • 作  者:   OHTA T, BOSTWICK A, SEYLLER T, HORN K, ROTENBERG E
  • 作者关键词:  
  • 出版物名称:   SCIENCE
  • ISSN:   0036-8075 EI 1095-9203
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   2318
  • DOI:   10.1126/science.1130681
  • 出版年:   2006

▎ 摘  要

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.