▎ 摘 要
Recently, a hybrid graphene/poly-BrNpA phosphor structure was used to fabricate rewritable p-n junction photodiode responsive to visible light. In this process, photoisomerization occurred under moderate ultraviolet (UV) irradiation (lambda = 365 nm, optical intensity I-UV = 1.318 mu W mu m(2)), and the subsequent water (H2O) molecule adsorption facilitate charge transfer at the interface. In this study, we explore the feasibility of making UV photodetector based on the hybrid graphene/poly-BrNpA field-effect transistor. The incident UV light (lambda = 365 nm, IUV