▎ 摘　　要

The electronic properties of graphene are tunable via doping, making it attractive in low dimensional organic electronics. Common methods of doping graphene, however, adversely affect charge mobility and degrade device performance. We demonstrate a facile shadow mask technique of defining electrodes on graphene grown by chemical vapor deposition (CVD) thereby eliminating the use of detrimental chemicals needed in the corresponding lithographic process. Further, we report on the controlled, effective, and reversible doping of graphene via ultraviolet (UV) irradiation with minimal impact on charge mobility. The change in charge concentration saturates at similar to 2 X 10(12) cm(-2) and the quantum yield is similar to 10(-5) e/photon upon initial UV exposure. This simple and controlled strategy opens the possibility of doping wafer-size CVD graphene for diverse applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729828]