• 文献标题:   The Role of the Graphene Oxide (GO) and PEO Treated-Zinc Oxide (ZnO/PEO) Intermediate Electrode Buffer Layer in Vacuum-Free Quantum Dots Solar Cell
  • 文献类型:   Article
  • 作  者:   KANG SB, JO Y, LAM NH, JUNG JH, KIM CD, TRUONG NTN
  • 作者关键词:   spherical, iron pyrite, buffer layer, graphene oxide, vacuum free
  • 出版物名称:   METALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.3390/met12122096
  • 出版年:   2022

▎ 摘  要

The vacuum-free quantum dots solar cell (VFQDSC) was fabricated without using any vacuum process. The spherical iron pyrite (FeS2) nanoparticles (SNPs) and ZnO nanoparticles (NPs) were synthesized and characterized. In the device structure, FeS2 SNPs were used as an acceptor material (n-type), and the low band gap polymer of poly[4,8-bis(2-ethylhexyloxyl)benzo[1,2-b:4,5-b ']-dithiophene-2,6-diyl-alt-ethylhexyl-3-fluorothieno[3,4-b]thiophene-2-carboxylate-4,6-diyl] (PBT7) was used as a donor material (p-type). In this study, we first applied the graphene oxide (GO) as the hole transport buffer layer (HTBL) and zinc oxide (ZnO) as an electron transport buffer layer (ETBL), which were considered to improve the charge transportation efficiency of the device's system. The device with the structure of the Glass/ITO/HTBL/FeS2 SNPs, PBT7/ ETBL/E-GaIn were fabricated with a maximum power conversion efficiency (PCE) of 3.6%.