• 文献标题:   Raman study of ion-induced defects in N-layer graphene
  • 文献类型:   Article
  • 作  者:   JORIO A, LUCCHESE MM, STAVALE F, FERREIRA EHM, MOUTINHO MVO, CAPAZ RB, ACHETE CA
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984
  • 通讯作者地址:   Univ Fed Minas Gerais
  • 被引频次:   70
  • DOI:   10.1088/0953-8984/22/33/334204
  • 出版年:   2010

▎ 摘  要

Raman scattering is used to study the effect of low energy (90 eV) Ar(+) ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm-1) with ion fluence is determined for mono-, bi-, tri-and similar to 50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar(+) ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.