▎ 摘　　要

In this paper, the effect of annealing on the electrical properties of graphene/Al-Zr ZnO Schottky contacts was studied in detail. The results showed that the grain size of Al-Zr doped ZnO films grew with the increasing of annealing temperature. Meanwhile, the defective oxygen in the films decreased. In addition, the leakage current of graphene/Al-Zr ZnO Schottky contact decreased and barrier height increased. This phenomenon can be explained by the reduction of oxygen vacancies and the weakening of Fermi level pinning.