• 文献标题:   Epitaxial graphene: the material for graphene electronics
  • 文献类型:   Editorial Material
  • 作  者:   SPRINKLE M, SOUKIASSIAN P, DE HEER WA, BERGER C, CONRAD EH
  • 作者关键词:  
  • 出版物名称:   PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS
  • ISSN:   1862-6254 EI 1862-6270
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   39
  • DOI:   10.1002/pssr.200903180
  • 出版年:   2009

▎ 摘  要

The search for an ideal graphene sheet has been a quest driving graphene research. While most research has focused on exfoliated graphene, intrinsic substrate interactions and mechanical disorder have precluded the observation of a number of graphene's expected physical properties in this material. The only graphene candidate that has demonstrated all the essential properties of an ideal sheet is multilayer graphene grown on the SiC(000 (1) over bar) Surface. Its unique stacking allows nearly all the sheets in the stack to behave like isolated graphene, while the weak graphene-graphene interaction prevents any significant doping or distortion in the band near the Fermi level. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim