• 文献标题:   Review Article: Tunneling-based graphene electronics: Methods and examples
  • 文献类型:   Review
  • 作  者:   KATKOV VL, OSIPOV VA
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Joint Inst Nucl Res
  • 被引频次:   4
  • DOI:   10.1116/1.4995380
  • 出版年:   2017

▎ 摘  要

The authors present an overview of the main theoretical approaches used to describe tunnel processes in graphene nanoelectronics. Two currently central theoretical methods of calculating tunnel current, the Bardeen tunneling Hamiltonian approach and the method of nonequilibrium Green's functions, are reviewed in a pedagogical fashion. Several examples are used to illustrate the specific features of the methods. An application of both methods to the analysis of current flow in graphene tunnel field-effect transistors is discussed. (C) 2017 Author(s).