▎ 摘　　要

In the present work, it is proposed to use multilayer graphene (MLG) as a charge storage layer in the non-volatile memory based on the Si/ZrO2/MLG/SiO2/Si structure. The write/erase, retention characteristics and charge density kinetics in the MLG of the memory element are calculated. Due to the metallic properties of MLG and the blocking layer made of high-k dielectric, the voltage drop on them in the write/erase mode is decreased. At the same time, the increase in the voltage drop in the SiO2 tunneling layer grows, in its turn, the Fowler-Nordheim current, which leads to a higher memory element performance. The big work function for electrons (similar to 5 eV) in MLG contributes to a better charge storage in it. According to our calculations, for write/erase voltages of +/- 11 V, there is a 5V memory window, and the memory window value will be equal to 3 V in 10 years.