• 文献标题:   Additional levels between Landau bands due to vacancies in graphene: Towards defect engineering
  • 文献类型:   Article
  • 作  者:   PEREIRA ALC, SCHULZ PA
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Univ Estadual Campinas UNICAMP
  • 被引频次:   23
  • DOI:   10.1103/PhysRevB.78.125402
  • 出版年:   2008

▎ 摘  要

We describe the effects of vacancies on the electronic properties of a graphene sheet in the presence of a perpendicular magnetic field: from a single defect to an organized vacancy lattice. An isolated vacancy is the minimal possible inner edge, showing an antidotlike behavior, which results in an extra level between consecutive Landau levels. Two close vacancies may couple to each other, forming a vacancy molecule tuned by the magnetic field. We show that a vacancy lattice introduce an extra band in between Landau levels with localization properties that could lead to extra Hall resistance plateaus.