• 文献标题:   Stacking-dependent shear modes in trilayer graphene
  • 文献类型:   Article
  • 作  者:   LUI CH, YE ZP, KEISER C, BARROS EB, HE R
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ No Iowa
  • 被引频次:   31
  • DOI:   10.1063/1.4906579
  • 出版年:   2015

▎ 摘  要

We observe distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We find that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence is not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes. (C) 2015 AIP Publishing LLC.