▎ 摘　　要

We demonstrate photo-patternable ion gel-gated graphene transistors and inverters on plastic substrates. The photo-patternable ion gel can be used as a negative photoresist for the patterning of underlying graphene as well as gate dielectrics. As a result, an extra graphene-patterning step is not required, which simplifies the device fabrication and avoids a side effect arising from the photoresist residue. The high capacitance of ion gel gate dielectrics yielded a low voltage operation (similar to 2 V) of the graphene transistor and inverter. The graphene transistors on plastic showed an on/off-current ratio of similar to 11.5, along with hole and electron mobilities of 852 +/- 124 and 452 +/- 98 cm2 V-1 s(-1), respectively. In addition, the flexible graphene inverter was successfully fabricated on plastic through the potential superposition effect from the drain bias. These devices show excellent mechanical flexibility and fatigue stability.