• 文献标题:   A graphene/single GaAs nanowire Schottky junction photovoltaic device
  • 文献类型:   Article
  • 作  者:   LUO YB, YAN X, ZHANG JN, LI B, WU Y, LU QC, JIN CXS, ZHANG X, REN XM
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Beijing Univ Posts Telecommun
  • 被引频次:   18
  • DOI:   10.1039/c8nr00158h
  • 出版年:   2018

▎ 摘  要

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 mu s at zero bias. Under AM 15 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm(-2), yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.