▎ 摘　　要

Graphene nanomeshes (GNMs) are expected to be a high-performance channel material for metal-oxide-semiconductor field-effect-transistors (MOSFETs), since they can open up a band gap in a large sheet of graphene thin film by simply introducing two-dimensional periodical nanoscale holes. In this paper, we theoretically investigate the electronic band structures and the electron transport properties of GNMs based on a tight-binding approach. We demonstrate that GNMs have the capability of band structure engineering by controlling its neck width and furthermore the potential ability providing high current drivability when applied to a field-effect-transistor channel. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4800624]