• 文献标题:   Effect of staged methane flow on morphology and growth rate of graphene monolayer domains by low-pressure chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   YAN H, YANG HQ, LIN S, HE JB, KISS L, KUNSAGIMATE S, ZHANG M, LI H
  • 作者关键词:   methane flow, graphene domain, morphology, growth rate, lowpressure chemical vapor deposition
  • 出版物名称:   THIN SOLID FILMS
  • ISSN:   0040-6090 EI 1879-2731
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1016/j.tsf.2021.138921 EA SEP 2021
  • 出版年:   2021

▎ 摘  要

Although many efforts have been spent on graphene growth, there is still a lack of comprehensive understanding about the growth mechanism and precise control for different morphologies of graphene domains synthesis though carbon precursor. In this work, controlled single-crystal graphene monolayer domains with different morphologies of four, six and multiple symmetry have been achieved just by staged modulation of methane flow through low-pressure chemical vapor deposition method on copper. The growth rate can also be regulated by the methane flow, and the highest growth rate can reach 25 mu m/min corresponding to the multiple-dendritic shape. The schematic structure of the different shapes with active sites has been proposed to understand the formation mechanism of different graphene domains. Synthesis single crystal graphene with various morphologies will be of great promising potential applications in catalytic and many other fields.