• 文献标题:   Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio
  • 文献类型:   Article
  • 作  者:   LEE SY, DUONG DL, VU QA, JIN Y, KIM P, LEE YH
  • 作者关键词:   bilayer graphene, bandgap opening, doping, on/off ratio, nonvolatile memory
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   27
  • DOI:   10.1021/acsnano.5b03130
  • 出版年:   2015

▎ 摘  要

We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer graphene, respectively. A high mobility of similar to 3100 cm(2) V-1 s(-1) with a high on/off ratio of 76.1 was obtained at room temperature without significant degradation of the on-current. This is attributed to low charge scattering due to physisorbed dopants without provoking sp(3) structural disorders. By utilizing our band-gap-opened bilayer graphene, excellent nonvolatile memory switching behavior was demonstrated with a clear program/erase state by applying pulse gate bias. The initial program/erase current ratio of similar to 34.5 was still retained at higher than 10 even after 10(4) s.