• 文献标题:   Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   LIU Z, ABOUELKOMSAN A, BERGHOLTZ EJ
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:  
  • 被引频次:   17
  • DOI:   10.1103/PhysRevLett.126.026801
  • 出版年:   2021

▎ 摘  要

We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number C = 1 and C = 2 bands, occur at high temperatures and without the need for an external magnetic field.