• 文献标题:   Theory of Weak-Field Magnetoresistance in Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   ANDO T
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
  • ISSN:   0031-9015
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   2
  • DOI:   10.7566/JPSJ.88.044707
  • 出版年:   2019

▎ 摘  要

The magnetoconductivity, which is the correction to the diagonal conductivity proportional to the second power of magnetic-field strength, is calculated in bilayer graphene in the presence of scatterers with long-range potential such as a Gaussian potential and screened Coulomb potential in a self-consistent Born approximation. The magnetoresistivity in a usual Hall bar geometry exhibits prominent double-peak structure in the vicinity of zero energy and remains very small in other regions because of the cancellation with a counter term due to the Hall effect. In a constant broadening approximation, on the other hand, the magnetoresistivity becomes negative and has a sharp double-dip structure. These features are quite similar to those in monolayer graphene.