▎ 摘　　要

A flake of monolayer graphene was sandwiched between boron nitride sheets. Temperature dependent Shubnikov-de Haas measurements were performed to access how this technique influences the electronic properties of the graphene sample. The maximum mobility found in this configuration was approximately 105 cm(2) Vs(-1). From the phase of the oscillations a Berry phase beta of 1/2 was obtained indicating the presence of Dirac fermions. We obtained Fermi velocities around 0.8x10(6) m s(-1) which imply hopping energies close to 2.5 eV. Furthermore, the carrier lifetime is typically higher than that found in graphene supported by SiO2, reaching values higher than 700 fs.