• 文献标题:   Transconductance Fluctuations as a Probe for Interaction-Induced Quantum Hall States in Graphene
  • 文献类型:   Article
  • 作  者:   LEE DS, SKAKALOVA V, WEITZ RT, VON KLITZING K, SMET JH
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Max Planck Inst Festkoperforsch
  • 被引频次:   25
  • DOI:   10.1103/PhysRevLett.109.056602
  • 出版年:   2012

▎ 摘  要

Transport measurements normally provide a macroscopic, averaged view of the sample so that disorder prevents the observation of fragile interaction-induced states. Here, we demonstrate that transconductance fluctuations in a graphene field effect transistor reflect charge localization phenomena on the nanometer scale due to the formation of a dot network which forms near incompressible quantum states. These fluctuations give access to fragile broken symmetry and fractional quantum Hall states even though these states remain hidden in conventional magnetotransport quantities.