• 文献标题:   Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-SiC(0001)
  • 文献类型:   Article
  • 作  者:   SFORZINI J, NEMEC L, DENIG T, STADTMULLER B, LEE TL, KUMPF C, SOUBATCH S, STARKE U, RINKE P, BLUM V, BOCQUET FC, TAUTZ FS
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Forschungszentrum Julich
  • 被引频次:   41
  • DOI:   10.1103/PhysRevLett.114.106804
  • 出版年:   2015

▎ 摘  要

We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (6 root 3 x 6 root 3)-R30 degrees unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H-SiC(0001) approaches ideal graphene.