• 文献标题:   Gate dependent photoresponse in self-assembled graphene p-n junctions
  • 文献类型:   Article
  • 作  者:   YIN WH, WANG YB, HAN Q, YANG XH
  • 作者关键词:   graphene, photodetector, photovoltage, photothermoelectric
  • 出版物名称:   CHINESE PHYSICS B
  • ISSN:   1674-1056 EI 1741-4199
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   3
  • DOI:   10.1088/1674-1056/24/6/068101
  • 出版年:   2015

▎ 摘  要

The intrinsic photocurrent generation mechanism of a self-assembled graphene p-n junction operating at 1.55 mu m is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p-n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.