• 文献标题:   Gate-Tunable Spin Hall Effect in an All-Light-Element Heterostructure: Graphene with Copper Oxide
  • 文献类型:   Article
  • 作  者:   YANG HZ, ORMAZA M, CHI ZD, DOLAN E, INGLAAYNES J, SAFEER CK, HERLING F, ONTOSO N, GOBBI M, MARTINGARCIA B, SCHILLER F, HUESO LE, CASANOVA F
  • 作者关键词:   spin hall effect, graphene, spintocharge conversion, light metal oxide
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1021/acs.nanolett.3c00687 EA MAY 2023
  • 出版年:   2023

▎ 摘  要

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback for exhibiting a sizable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 +/- 0.6 nm at 100 K) around the charge neutrality point. This all-lightelement heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication.