▎ 摘　　要

This paper presents the thermoelectric properties of graphene-based three-terminal junction on SiO2/Si substrate. The device demonstrates rectified output voltage while applying electrical (AC/DC) signal or temperature gradient at the input terminals. The voltage detection sensitivity of 736.38 mV/mW and noise equivalent power of 26 pW/Hz(1/2) is achieved at 15 V. At the temperature gradient of 150 K, the proposed device exhibits a thermal voltage of 0.83 mV at the output terminal. Accordinlgy, Seebeck coefficient of 82 and 123 mu VK-1 is obtained at 300 and 450 K, respectively considering back-gate voltage of 0 V. The results are further validated by the analytical model and are well in agreement with the simulation results obtained utilizing Silvaco TCAD software. The results suggest that the proposed G-TTJ can be realised for future energy harvesting applications in addition to microwave/THz detection.