• 文献标题:   Device Model for Graphene Spin Valves
  • 文献类型:   Article
  • 作  者:   LIU FL, LIU Y, SMITH DL, RUDEN PP
  • 作者关键词:   magnetoresistance mr, semiconductor device modeling, spin valve
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Univ Minnesota
  • 被引频次:   6
  • DOI:   10.1109/TED.2015.2464793
  • 出版年:   2015

▎ 摘  要

A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.