▎ 摘　　要

The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 degrees C shows a band-like transport with small thermal activation energy (E-a similar to 10 meV) that occurs during high carrier mobility (similar to 210 cm(2)/Vs). Electrical and structural analysis using X-ray absorption fine structure, the valence band photo-electron, Raman spectra and transmission electron microscopy indicate that a high temperature process above 1000 degrees C in the ethanol environment leads to an extraordinary expansion of the conjugated pi-electron system in rGO due to the efficient restoration of the graphitic structure. We reveal that E-a decreases with the increasing density of states near the Fermi level due to the expansion of the conjugated pi-electron system in the rGO. This means that E-a corresponds to the energy gap between the top of the valence band and the bottom of the conduction band. The origin of the band-like transport can be explained by the carriers, which are more easily excited into the conduction band due to the decreasing energy gap with the expansion of the conjugated pi-electron system in the rGO.