▎ 摘　　要

Graphene nanowrinkles (GNWs) are easily formed and manipulated by extrinsic perturbation in a continuous graphene nanosheet, which provides a suitable platform to study strain engineering. The deformation-induced pseudo-Landau levels (PLLs) and the wide bandgap states in GNWs were studied separately in different samples, which makes it hard to distinguish their difference, and the direct switch between them has not been observed yet. Here, using scanning tunneling microscopy (STM) tip manipulation, we realize the transition from PLL states to bandgap states through tuning the structure of the nanowrinkles in the same graphene nanosheet. Taking the close scan method, the GNWs are observed to be flattened with their PLL states turned off. Further applying a STM tip pulse, new nanowrinkles are rebuilt in the same graphene nanosheet. The distance between the ravine region of the newly formed GNWs and the substrate is dramatically shortened by the strong tip force. Therefore, the wide bandgap states are detected in the GNWs because of the resulting strong coupling of the substrate. Our result opens an avenue to engineer the quantum phenomena in strained graphene and provides more possibilities for the application of graphene nanostructures on microelectronic devices in the future.