• 文献标题:   Low Energy BCl3 Plasma Doping of Few-Layer Graphene
  • 文献类型:   Article
  • 作  者:   PHAM VP, KIM DS, KIM KS, PARK JW, YANG KC, LEE SH, YEOM GY, KIM KN
  • 作者关键词:   bcl3, plasma doping, trappeddoping, multilayer graphene, low damage
  • 出版物名称:   SCIENCE OF ADVANCED MATERIALS
  • ISSN:   1947-2935 EI 1947-2943
  • 通讯作者地址:   Sungkyunkwan Univ SKKU
  • 被引频次:   5
  • DOI:   10.1166/sam.2016.2549
  • 出版年:   2016

▎ 摘  要

In this paper, we use low energy BCl3 plasma for the doping of graphene, and investigate its effect on graphene sheet resistance. In particular, for few-layer graphene, we use a cyclic trap-doping technique to control the dopants between the graphene layers. By using the cyclic tra-doping with the low energy BCl3 plasma, we obtain significant reduction of sheet resistance (similar to 75%), while maintaining high optical transparency, flexibility, conductivity, and thermal stability. Raman data show that the graphene layers are p-type doped with no noticeable damage during the doping. By optimizing the doping condition, we obtain sheet resistance and optical transmittance of BCl3 doped trilayer graphene of 100 Omega/sq and 92% at 550 nm, respectively, which is very compatible with flexible display devices.