▎ 摘　　要

Graphene has, due to its favourable features, a wide usage in a range of industries. A number of methods are being used for its preparation, each of them being suitable for another application of graphene. One of the methods is based on annealing of a metal/SiC structure at temperatures ranging from 800 to 1000 degrees C; graphene is formed here on the basis of carbon segregation from the metallization. This process is dependent on the reaction of metals with SiC and on solubility of carbon within metals. Our work was focused on modification of solubility of carbon in basic metals (Ni and Co) by adding suitable admixtures-Ge, Cu, Au. Principal influence onto parameters of graphene films had copper added into the metallization with cobalt. We succeeded to prepare graphene containing two carbon mono-layers (BLG).