• 文献标题:   Raman enhancement by graphene-Ga2O3 2D bilayer film
  • 文献类型:   Article
  • 作  者:   ZHU Y, YU QK, DING GQ, XU XG, WU TR, GONG Q, YUAN NY, DING JN, WANG SM, XIE XM, JIANG MH
  • 作者关键词:   graphene, raman enhancement, gallium oxide, chemical vapor deposition
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1931-7573 EI 1556-276X
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   6
  • DOI:   10.1186/1556-276X-9-48
  • 出版年:   2014

▎ 摘  要

2D beta-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.