▎ 摘　　要

GaN films were grown on a multilayer graphene (MLG)/amorphous SiO2 stack by pulsed sputtering deposition and their structural properties were investigated. The GaN films on MLG show high c-axis orientation. In addition, the GaN films exhibit coexisting zincblende and wurtzite phases, but the zincblende phase is suppressed by the insertion of AIN interlayers. The polarity control of the GaN films was demonstrated using AIN interlayers with and without surface oxidation. These results indicate that the proposed technique can yield high-quality Ga-polarity GaN films on MLG for potential use in large-area GaN-based optical and electronic devices. (C) 2014 The Japan Society of Applied Physics