• 文献标题:   Discontinuous Galerkin approach for the simulation of charge transport in graphene
  • 文献类型:   Article, Early Access
  • 作  者:   NASTASI G, ROMANO V
  • 作者关键词:   boltzmann equation, charge transport, graphene, discontinuous galerkin method, graphene field effect transistor gfet
  • 出版物名称:   RICERCHE DI MATEMATICA
  • ISSN:   0035-5038 EI 1827-3491
  • 通讯作者地址:   Univ Catania
  • 被引频次:   1
  • DOI:   10.1007/s11587-020-00530-8 EA JUL 2020
  • 出版年:  

▎ 摘  要

The Boltzmann equation for charge transport in monolayer graphene is numerically solved by using a discontinuous Galerkin method. The numerical fluxes are based on a uniform non oscillatory reconstruction. The numerical scheme has been tested by simulating the electron dynamics in a graphene field effect transistor. To the best of our knowledge the presented simulations are the first ones using a full Boltzmann equation in graphene devices.