• 文献标题:   Flat Bands for Electrons in Rhombohedral Graphene Multilayers with a Twin Boundary
  • 文献类型:   Article, Early Access
  • 作  者:   GARCIARUIZ A, SLIZOVSKIY S, FAL KO VI
  • 作者关键词:   berry curvature, electronic band structure, graphene, tightbinding, twin boundary interface
  • 出版物名称:   ADVANCED MATERIALS INTERFACES
  • ISSN:   2196-7350
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1002/admi.202202221 EA JAN 2023
  • 出版年:   2023

▎ 摘  要

Topologically protected flat surface bands make thin films of rhombohedral graphite an appealing platform for searching for strongly correlated states of 2D electrons. In this work, rhombohedral graphite is studied with a twin boundary stacking fault and the semimetallic and topological properties of low-energy bands, localized at the surfaces and at the twinned interface, are analyzed. An effective 4-band low energy model is derived, where the full set of Slonczewski-Weiss-McClure (SWMcC) parameters is implemented, and the conditions for the bands are found to be localized at the twin boundary, protected from the environment-induced disorder. This protection together with a high density of states at the charge neutrality point, in some cases-due to a Lifshitz transition, makes this system a promising candidate for hosting strongly-correlated effects.