▎ 摘　　要

We report a study of structural properties of graphene grown on germanium (001) when subjected to hydrogen intercalation during cooling, using chemical vapor deposition method. The systematic statistical analysis of the Raman spectra indicated that hydrogen increased the number of structural defects in graphene and caused the increase of the compressive strain. Interestingly, it was also found that hydrogen impacted on charge doping. These findings offer a new insight into the nature of graphene-germanium interaction and constitutes an important step towards graphene integration into modern electronics.