▎ 摘　　要

The problem of graphene fabrication is still open. Nowadays one of the best methods of graphene synthesis is a chemical vapor deposition (CVD) on copper substrates. Here we present a study of a dependence of the quality and size of synthesized graphene monolayer on the synthesis process parameters. The time of synthesis was found to be one of the key parameters influenced to the number of defects, which was estimated on the base of D peak (1350 cm(-1)) height in Raman spectra. Another important parameters are the substrate maximum temperature and the period of maintaining the sample under this temperature.