• 文献标题:   Molecular charge-transfer interaction with single-layer graphene
  • 文献类型:   Article
  • 作  者:   LATE DJ, GHOSH A, CHAKRABORTY B, SOOD AK, WAGHMARE UV, RAO CNR
  • 作者关键词:   graphene, doping, raman spectroscopy
  • 出版物名称:   JOURNAL OF EXPERIMENTAL NANOSCIENCE
  • ISSN:   1745-8080
  • 通讯作者地址:   Jawaharlal Nehru Ctr Adv Sci Res
  • 被引频次:   19
  • DOI:   10.1080/17458080.2010.529174
  • 出版年:   2011

▎ 摘  要

While the effect of electrochemical doping on single-layer graphene (SG) with holes and electrons has been investigated, the effect of charge-transfer doping on SG has not been examined hitherto. Effects of varying the concentration of electron donor and acceptor molecules such as tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE) on SG produced by mechanical exfoliation as well as by the reduction of single-layer graphene oxide have been investigated. TTF softens the G-band in the Raman spectrum, whereas TCNE stiffens the G-band. The full-width-at-half-maximum of the G-band increases on interaction with both TTF and TCNE. These effects are similar to those found with few-layer graphene, but in contrast to those found with electrochemical doping. A common feature between the two types of doping is found in the case of the 2-D band, which shows softening and stiffening on electron and hole doping, respectively. The experimental results are explained on the basis of the frequency shifts, electron-phonon coupling and structural inhomogeneities that are relevant to molecule-graphene interaction.