• 文献标题:   Iodine doping in solid precursor-based CVD growth graphene film
  • 文献类型:   Article
  • 作  者:   KALITA G, WAKITA K, TAKAHASHI M, UMENO M
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY
  • ISSN:   0959-9428
  • 通讯作者地址:   Chubu Univ
  • 被引频次:   70
  • DOI:   10.1039/c1jm13268g
  • 出版年:   2011

▎ 摘  要

Doping of different elements in intrinsic graphene is of great importance to adjust the electrical and chemical properties for realization of different electronic devices. Here, we demonstrate a simple and controllable synthesis process of iodine-doped graphene film using camphor (C(10)H(16)O), a solid botanical derivative. In situ doping of iodine in a graphene film has many difficulties in a conventional chemical vapor deposition process using a gas source. In this technique, iodine was mixed with the carbon precursor and simultaneously evaporated to pyrolysis on a metal catalytic substrate. Raman and X-ray photoelectron spectroscopic studies confirm the presence of elemental iodine in the form of triiodide and pentaiodide. Simultaneously, evaporated iodine atoms remains within the few-layers graphene structure and interact with carbon atoms through a charge transfer process. This shows a straightforward technique for iodine doping in graphene and a similar approach can be adopted to deposit iodine-doped graphene on other metal substrates.