• 文献标题:   A label-free photoelectrochemical sensor of S, N co-doped graphene quantum dot (S, N-GQD)-modified electrode for ultrasensitive detection of bisphenol A
  • 文献类型:   Article
  • 作  者:   CHEN QW, YUAN C, HE ZL, WANG J, ZHAI CY, BIN D, ZHU MS
  • 作者关键词:   s ndoped graphene quantum dot, elemental doping, bisphenol a, photoelectrochemical sensor
  • 出版物名称:   MICROCHIMICA ACTA
  • ISSN:   0026-3672 EI 1436-5073
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1007/s00604-022-05289-3
  • 出版年:   2022

▎ 摘  要

S, N co-doped graphene quantum dot (S, N-GQD) materials have been composited via a one-pot pattern and used as photosensitive materials to construct a label-free photoelectrochemical (PEC) sensor. The PEC experiments show an enhanced photocurrent response toward Bisphenol A (BPA) sensing due to the increased charge transfer rate and the enhanced absorption of visible light. Compared with dark conditions, the photocurrent signal (-0.2 V vs. SCE) is greatly increased because of the effective oxidation of BPA by photogenerated holes and the rapid electron transfer of S, N-GQDs on the PEC sensing platform. Under optimal conditions linear current response to BPA is in two ranges of 0.12-5 mu M and 5-40 mu M. The limit of detection is 0.04 mu M (S/N = 3). The designed sensor has enduring stability and admirable interference immunity. It provides an alternative approach for BPA determination in real samples with recoveries of 99.3-103% and RSD of 2.0-4.1%.