• 文献标题:   A comparison of various surface charge transfer hole doping of graphene grown by chemical vapour deposition
  • 文献类型:   Article
  • 作  者:   CHANDRAMOHAN S, SEO TH, JANARDHANAM V, HONG CH, SUH EK
  • 作者关键词:   graphene, charge transfer doping, molybdenum trioxide, rapid thermal annealing
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Chonbuk Natl Univ
  • 被引频次:   3
  • DOI:   10.1016/j.apsusc.2017.01.097
  • 出版年:   2017

▎ 摘  要

Charge transfer doping is a renowned route to modify the electrical and electronic properties of graphene. Understanding the stability of potentially important charge-transfer materials for graphene doping is a crucial first step. Here we present a systematic comparison on the doping efficiency and stability of single layer graphene using molybdenum trioxide (MoO3), gold chloride (AuCl3), and bis(trifluoromethanesulfonyl)amide (TFSA). Chemical dopants proved to be very effective, but MoO3 offers better thermal stability and device fabrication compatibility, Single layer graphene films with sheet resistance values between 100 and 200 ohm/square were consistently produced by implementing a two-step growth followed by doping without compromising the optical transmittance. (C) 2017 Elsevier B.V. All rights reserved.