▎ 摘　　要

This letter proposes a graphene field-effect transistor (GFET) device with double top-gates and double feedback. An intuitive explanation of the device is provided and its performance is verified by numerical solution of the GFET large signal model in the p- and n-type regions. Simulation shows that the device can provide full current saturation within a large voltage range using a typical GFET's structure. The saturation current can be adjusted using a control voltage and other circuit parameters, which makes it a voltage-controlled current source suitable for analog and flexible circuit applications.