• 文献标题:   Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures
  • 文献类型:   Article
  • 作  者:   XIA CX, XUE B, WANG TX, PENG YT, JIA Y
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Henan Normal Univ
  • 被引频次:   76
  • DOI:   10.1063/1.4935602
  • 出版年:   2015

▎ 摘  要

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 angstrom, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures. (C) 2015 AIP Publishing LLC.