▎ 摘　　要

The electrical properties of porous graphene (PG) are investigated by using the density functional theory (DFT) with the generalized gradient approximation (GGA). The addition of Boron and nitrogen impurities could change the semiconductor into the n or p-type. Results showed that PG had pseudo-metal properties and a direct band gap. Furthermore, adding two impurities resulted in a greater decrease in the energy of the band gap as compared to the other states. In particular, when two impurities were of the boron type, the reduction was more tangible. Moreover, the addition of impurity could also increase the conductivity and pushed the electrical properties toward being a metal.