• 文献标题:   Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   YAN K, PENG HL, ZHOU Y, LI H, LIU ZF
  • 作者关键词:   graphene, bilayer, bernal stacking, cvd, epitaxy, band gap opening
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Peking Univ
  • 被引频次:   263
  • DOI:   10.1021/nl104000b
  • 出版年:   2011

▎ 摘  要

We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.