▎ 摘　　要

Hybrid graphene and hexagonal boron nitride (C-BN) nanostructure received much research interest due to complementary electronic properties. Graphene is zero band gap semiconductor, while hexagonal boron nitride (h-BN) is a wide band gap semiconductor. Here, we have studied the structural, electronic and mechanical properties of hybrid zigzag graphene atomic chain with boron nitride doped, and zigzag boron nitride atomic chain with carbon pairs doped. Covalent bonds are found between carbon atoms, partially ionic and covalent bonds between boron and nitrogen atoms. BN atomic chain with 6 carbon pairs-ZBNGR transformed into a metal, and GR with 14-carbon pairs-ZGRBN transformed into a semiconductor. In the distribution of density of states; p-orbital electrons are contributing. There is a zero band gap in ZBNGR, and indirect band gap in ZGRBN. Band gap of second hybrid is tuned and becomes metal by the application of strain and external electric field. Breaking energy is found to be higher for first hybrid during compression of a chain. These investigations make hybrid atomic chains significant in device applications.