• 文献标题:   Adsorption-Induced Energy Gap in the Density of States of Single-Sheet Graphene
  • 文献类型:   Article
  • 作  者:   DAVYDOV SY
  • 作者关键词:  
  • 出版物名称:   SEMICONDUCTORS
  • ISSN:   1063-7826 EI 1090-6479
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   16
  • DOI:   10.1134/S1063782612020066
  • 出版年:   2012

▎ 摘  要

On the basis of a simple model, it is shown that a monolayer of adatoms bound by an indirect exchange interaction causes the appearance of an energy gap in the density of states of a two-dimensional substrate. The character of the dependence of the pi and pi* bands and band gap on the position of the adatom level is analyzed in detail. The occupation numbers for the monolayer of adatoms and graphene are calculated. Numerical calculations are carried out for graphane.