• 文献标题:   Levy Flights due to Anisotropic Disorder in Graphene
  • 文献类型:   Article
  • 作  者:   GATTENLOHNER S, GORNYI IV, OSTROVSKY PM, TRAUZETTEL B, MIRLIN AD, TITOV M
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Radboud Univ Nijmegen
  • 被引频次:   8
  • DOI:   10.1103/PhysRevLett.117.046603
  • 出版年:   2016

▎ 摘  要

We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed backscattering are formed in this model in the direction of the lines. The system reveals Levy-flight transport in the stripe direction such that the corresponding conductivity increases as the square root of the system length. Thus, adding this type of disorder to clean graphene near the Dirac point strongly enhances the conductivity, which is in stark contrast with a fully random distribution of on-site impurities, which leads to Anderson localization. The effect is demonstrated both by numerical simulations using the Kwant code and by an analytical theory based on the self-consistent T-matrix approximation.