▎ 摘　　要

The preparation of graphene films on dielectrics has great significance in the scientific and microelectronic industry, which was usually realized by a transferring process. However, the non-residue transfer of graphene films is still challenging, which hinders the practical application of graphene. Here, by utilizing direct bonding copper (DBC) ceramic plates, a face-to-face method was developed to realize the direct preparation of graphene films on dielectric substrates. By utilizing DBC ceramic plate face down to the substrate, graphene film could be first synthesized on the DBC film. The copper on the ceramic plate would melt away at elevated temperature, and the graphene film would directly attach to the target substrate. The one-step preparation process is simple and fast. On the other hand, centimeter-sized graphene films with high cleanness could be prepared by the face-to-face method. The prepared graphene film showed a mobility of similar to 6400 cm(2).V-1.S-1. We believe this method would bring a new solution for the synthesis of graphene films on dielectric substrates.