• 文献标题:   Electronic states of zigzag graphene nanoribbons with edges reconstructed with topological defects
  • 文献类型:   Article
  • 作  者:   PINCAK R, SMOTLACHA J, OSIPOV VA
  • 作者关键词:   nanoribbon, topological defect, density of state, tightbinding model, electronic band structure, zigzag edge
  • 出版物名称:   PHYSICA BCONDENSED MATTER
  • ISSN:   0921-4526 EI 1873-2135
  • 通讯作者地址:   Slovak Acad Sci
  • 被引频次:   5
  • DOI:   10.1016/j.physb.2015.06.025
  • 出版年:   2015

▎ 摘  要

The energy spectrum and electronic density of states (DOS) of zigzag graphene nanoribbons with edges reconstructed with topological defects are investigated within the tight-binding method. In case of the Stone-Wales zz(57) edge the low-energy spectrum is markedly changed in comparison to the pristine zz edge. We found that the electronic DOS at the Fermi level is different from zero at any width of graphene nanoribbons. In contrast, for ribbons with heptagons only at one side and pentagons at another one the energy gap at the Fermi level is open and the DOS is equal to zero. The reason is the influence of uncompensated topological charges on the localized edge states, which are topological in nature. This behavior is similar to that found for the structured external electric potentials along the edges. (C) 2015 Elsevier B.V. All rights reserved.